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參數(shù)資料
| 型號： | SSM6L13TU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Power Management Switch Applications |
| 中文描述： | 電源管理開關(guān)應用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | SSM6L13TU |
SSM6L13TU
2007-11-01
1
0
6
1.7±0.1
2.1±0.1
1
1
2
0
0
3
2
UF6
0
5
4
+
0
+
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
SSM6L13TU
Power Management Switch Applications
High-Speed Switching Applications
1.8 V drive
P–ch , N–ch 2–in–1
Low ON–resistance: Pch R
on
= 460 m
(max) (@V
GS
=
1.8 V)
R
on
= 306 m
(max) (@V
GS
=
2.5 V)
: Nch R
on
= 235 m
(max) (@V
GS
= 1.8 V)
R
on
= 178 m
(max) (@V
GS
= 2.5 V)
Q1 Absolute Maximum Ratings
(Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
V
GSS
I
D
I
DP
20
V
Gate-source voltage
±
12
V
DC
0.8
Drain current
Pulse
1.6
A
Q2 Absolute Maximum Ratings
(Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V
DS
V
GSS
I
D
I
DP
20
V
Gate-source voltage
±
8
0.8
V
DC
Drain current
Pulse
1.6
A
Absolute Maximum Ratings
(Q1 , Q2 Common)
(Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain power dissipation
P
D (Note 1)
T
ch
T
stg
500
mW
Channel temperature
150
°
C
°
C
Storage temperature range
55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Marking
Equivalent Circuit
(top view)
6
6
4
5
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
Q1
Q2
5
4
1
2
3
KV
1
2
3
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| SSM6N03FE | High Speed Switching Applications |
| SSM6N04FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM6N05FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSM6L13TU(T5LFT) | 功能描述:MOSFET LOW VOLTAGE MOSFET OPTOCPLR/SOLID STATE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSM6L13TU(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N/P-CH - Tape and Reel 制造商:Toshiba 功能描述:Trans MOSFET N/P-CH 20V 0.8A 6-Pin UF T/R 制造商:Toshiba America Electronic Components 功能描述:S-MOS,Nch+Pch,Vds=+/-20V,Id=180/-100mA |
| SSM6L13TU_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type |
| SSM6L14FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Management Switch Applications |
| SSM6L16FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
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