
SSM2275/SSM2475
REV. A
–4–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage (V
S
). . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
18 V
Input Voltage (V
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
15 V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . . .
±
15 V
Storage Temperature Range . . . . . . . . . . . .
2
65
°
C to
1
150
°
C
Operating Temperature Range . . . . . . . . . . .
2
40
°
C to
1
85
°
C
Junction Temperature Range. . . . . . . . . . . .
2
65
°
C to
1
150
°
C
Lead Temperature Range (Soldering, 60 sec) . . . . . . .
1
300
°
C
ESD Susceptibility. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2,000 V
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; the functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
For supplies less than
±
15 V, the input voltage and differential input voltage
must be less than
±
15 V.
Package Type
u
JA
*
u
JC
Units
8-Lead Plastic DIP
8-Lead SOIC
8-Lead microSOIC
14-Lead SOIC
14-Lead TSSOP
103
158
206
120
180
43
43
43
36
35
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
*
θ
JA
is specified for the worst case conditions, i.e., for device in socket for DIP
packages and soldered onto a circuit board for surface mount packages.
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Options
Model
SSM2275P
SSM2275S
SSM2275RM
SSM2475S
SSM2475RU
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
8-Lead PDIP
8-Lead SOIC
8-Lead microSOIC
14-Lead SOIC
14-Lead TSSOP
N-8
SO-8
RM-8
R-14
RU-14
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the SSM2275/SSM2475 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
FREQUENCY – Hz
100
80
–4010
1M
100
G
1k
10k
100k
60
40
20
0
–20
10M 40M
P
225
180
–90
135
90
45
0
–45
V
S
=
6
2.5V
R
L
= 2k
V
C
L
= 10pF
Figure 1. Phase/Gain vs. Frequency
FREQUENCY – Hz
100
80
–4010
1M
100
G
1k
10k
100k
60
40
20
0
–20
10M 40M
P
225
180
–90
135
90
45
0
–45
V
S
=
6
2.5V
R
L
= 600
V
C
L
= 10pF
Figure 2. Phase/Gain vs. Frequency