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參數資料
| 型號： | SSM1N45B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 450V N-Channel MOSFET |
| 中文描述： | 0.5 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 639K |
| 代理商： | SSM1N45B |
Rev. A, May 2004
S
2004 Fairchild Semiconductor Corporation
10
-1
10
0
10
1
0
100
200
300
400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
※
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V
DS
= 225V
V
DS
= 90V
V
DS
= 360V
Note : I
※
D
= 0.5 A
V
G
,
Q
G
, Total Gate Charge [nC]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
150
℃
Notes :
※
1. V
= 0V
2. 250μs Pulse Test
25
℃
I
D
,
V
SD
, Source-Drain voltage [V]
0
1
2
3
4
5
0
2
4
6
8
10
12
V
GS
= 20V
V
GS
= 10V
Note : T
※
J
= 25
℃
R
D
D
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
Notes :
※
1. V
= 50V
2. 250μs Pulse Test
-55
℃
150
℃
25
℃
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
V
GS
Top : 15.0 V
10.0 V
8.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
※
1. 250μs Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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