參數(shù)資料
型號: SSI7N60A
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | TO-262AA
中文描述: 晶體管| MOSFET的| N溝道| 600V的五(巴西)直| 7A條(?。﹟對262AA
文件頁數(shù): 3/7頁
文件大小: 652K
代理商: SSI7N60A
N-C HANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
SSW/I7N60A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 50 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
D
]
D
I
D
, Drain Current [A]
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
10
0
10
1
0
500
1000
1500
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0
5
10
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
@ Notes : I
D
= 7.0 A
V
G
Q
G
, Total Gate Charge [nC]
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