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參數(shù)資料
| 型號(hào)： | SSF10N90A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Power MOSFET（6.5A，900V，1.2Ω）(N溝道功率MOS場效應(yīng)管（漏電流6.5A, 漏源電壓900V，導(dǎo)通電阻1.2Ω）) |
| 中文描述： | 6.5 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 240K |
| 代理商： | SSF10N90A |
N-C HANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
SSF10N90A
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 50 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
0
10
20
30
40
50
0
1
2
3
4
5
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
D
]
D
I
D
, Drain Current [A]
10
0
10
1
0
1000
2000
3000
4000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
20
40
60
80
100
120
140
0
5
10
V
DS
= 720 V
V
DS
= 450 V
V
DS
= 180 V
@ Notes : I
D
= 10.0 A
V
G
Q
G
, Total Gate Charge [nC]
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