參數(shù)資料
型號(hào)： SSF10N80A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： N-Channel Power MOSFET（6.5A，800V，0.95Ω）(N溝道功率MOS場(chǎng)效應(yīng)管（漏電流6.5A, 漏源電壓800V，導(dǎo)通電阻0.95Ω）)
中文描述： 6.5 A, 800 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3PF, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 256K
代理商： SSF10N80A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
Ο
C
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(Filler
)
Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
Ο
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=700V
V
DS
=560V,T
C
=125
Ο
C
V
GS
=10V,I
D
=3A
*
V
DS
=50V,I
D
=3A
V
DD
=350V,I
D
=6A,
R
G
=11.5
See Fig 13
V
DS
=560V,V
GS
=10V,
I
D
=6A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
T
J
=25
di
F
/dt=100A/
μ
s
Ο
C
,I
S
=6A,V
GS
=0V
Ο
C
,I
F
=6A
SSF10N80A
800
--
2.0
--
--
--
--
--
1.02
--
--
--
--
--
260
110
29
58
152
48
125
19.2
55.4
--
--
3.5
100
-100
25
250
0.95
--
3500
300
130
70
125
315
105
165
--
--
6.6
2700
--
--
--
620
10.17
6.5
40
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=23mH, I
AS
=6.5A, V
DD
=50V, R
G
=27
, Starting T
J
=25
I
SD
6A, di/dt 200A/
μ
s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
Ο
C
Ο
C
<
O
1
O
O
3
O
2
4
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參數(shù)描述
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