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參數(shù)資料
| 型號： | SSD2019A |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 3.4A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| P通道| 20V的五（巴西）直| 3.4AI（四）|蘇 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 183K |
| 代理商： | SSD2019A |
Dual P-CHANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
℃
unless otherwise specified)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
②
Forward Transconductance
②
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
g
fs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V
nA
nA
μ
A
S
ns
nC
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250
μ
A
V
DS
= -5V ,I
D
=-250
μ
A
V
GS
=-12V
V
GS
=12V
V
DS
=-16V
V
DS
=-10V,T
C
=55
℃
V
DS
=-5V ,V
GS
=-4.5V
V
GS
=-4.5V,I
D
=-3.2A
V
GS
=-3.0V,I
D
=-2.0A
V
GS
=-2.7V,I
D
=-1.0A
V
DS
=-9.0V,I
D
=-3.4A
V
DD
=-6.0V,I
D
=-1.0A,
V
GS
=-4.5V,
②③
V
DS
=-6.0V,V
GS
=-4.5V,
I
D
=-3.2A
②③
Drain-to-Source Leakage Current
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
(Body Diode)
Diode Forward Voltage
②
Reverse Recovery Time
②
I
S
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
A
V
ns
Modified MOSFET Symbol
Showing the Integral Reverse
P-N Junction Rectifier
I
DON
On-State Drain-Source Current
A
V
SD
t
rr
T
A
=25
℃
,I
S
=-3.4A,V
GS
=0V
T
A
=25
℃
,I
F
=-3.4A,di
F
/dt=100A/
μ
s
SSD2019A
-20
-0.8
--
--
--
--
-8.0
--
--
--
--
--
--
--
--
--
--
0.086
0.103
0.108
8.0
18
17
49
17
13
3.4
4.6
--
--
-100
100
-1.0
-5.0
--
0. 11
0.15
0.19
--
40
80
70
40
20
--
--
--
--
--
75
-1.25
-1.2
100
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
Pulse Test : Pulse Width = 250
μ
s, Duty Cycle
≤
2%
③
Essentially Independent of Operating Temperature
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─
G
─
─
│
│
│
─
│
○
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D
S
│
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