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參數(shù)資料
| 型號： | SS22-S210 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Glass passivated junctions |
| 中文描述： | 玻璃鈍化路口 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SS22-S210 |
S
SS22-S210, Rev. A
SS22 - S210
2.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Glass passivated junctions.
High current capability, low V
F
.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 75
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
2.0
A
i
f(surge)
50
A
P
D
1.3
13
75
W
mW/
°
C
°
C/W
°
C
°
C
R
θ
JA
T
stg
T
J
-65 to +150
-65 to +125
Parameter
Device
Units
22
20
14
20
23
30
21
30
24
40
28
40
25
50
35
50
26
60
42
60
28
80
56
80
29
90
64
90
210
100
80
100
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage (Rated V
R
)
Maximum Reverse Current T
A
= 25
°
C
(Note 1)
@ rated V
R
Maximum Forward Voltage @ 2.0 A
T
A
= 100
°
C
0.4
10
700
mA
mA
mV
500
850
Note:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
2
1
0.220 (5.588)
0.200 (5.080)
0.185 (4.699)
0.160 (4.064)
0.096 (2.438)
0.083 (2.108)
0.155 (3.937)
0.130 (3.302)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.050 (1.270)
0.030 (0.762)
0.083 (2.108)
0.075 (1.905
)
Discrete POWE R & Signal
Technologies
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