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參數(shù)資料
| 型號： | SRV Series |
| 英文描述： | SRAM Memory Card 256KB Through 8MB(256KB - 8MB靜態(tài)RAM存儲器卡) |
| 中文描述： | SRAM的記憶卡，通過8MB的256KB的（256KB的- 8MB的靜態(tài)RAM的存儲器卡） |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 121K |
| 代理商： | SRV SERIES |
June 2000 Rev. 1 - ECO #12896
4
PCMCIA Flash Memory Card
SRV Series
PC Card Products
Symbol
A0 - A25
Type
Name and Function
INPUT
ADDRESS INPUTS:
A0 through A25 enable direct addressing of up
to 64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit. (address pins used are based on
card density,see pinout for highest used address pin)
DATA INPUT/OUTPUT:
DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and
DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.
CARD ENABLE 1 AND 2:
CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-
bit hosts to access all data on DQ0 - DQ7.
Active low signal enabling read data from the
memory card.
WRIT E ENABLE:
Active low signal gating write data to the memory
card.
R EADY /BUSY OUTPUT:
Not used for SRAM cards
CARD DET ECT 1 and 2:
Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WRIT E PROT ECT:
Follows hardware Write Protect Switch. When
Switch is placed in on position, signal is pulled high (10K ohm). When
switch is off signal is pulled low.
PROGRAM/ERASE POWER SUPPLY:
Not used for SRAM
cards.
CARD POWER SUPPLY:
3.3V / 5.0V for all internal circuitry.
GROUND:
for all internal circuitry.
ATTRIBUT E MEMORY SEL ECT :
only used with cards built with
optional attribute memory.
R ESET:
Not used for SRAM cards
WAIT:
This signal is pulled high internally for compatibility. No wait
states are generated.
BATT ERY VOLTAGE D ET ECT:
Provides status of Battery
voltage.
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires
extended recharge)
VOLTAGE SENSE:
Notifies the host socket of the card's VCC
requirements. VS1is grounded and VS2 is open to indicate a 3.3V/5V
16 bit card, with a 5V key, has been inserted.
R ESERV ED FOR FUTURE USE
NO INT ERNAL CONNECTION TO CARD:
pin may be driven
or left floating
DQ0 - DQ15
INPUT/OUT
PUT
CE1#, CE2#
INPUT
OE#
INPUT
WE#
INPUT
RDY /BSY #
CD1#, CD2#
OUTPUT
OUTPUT
WP
OUTPUT
VPP1, VPP2
N.C.
VCC
GND
REG #
INPUT
RST
WAIT #
INPUT
OUTPUT
BVD1, BVD2
OUTPUT
VS1, VS2
OUTPUT
RFU
N.C.
Card Signal Description
SRAM
FUNCTIONAL TRUTH TABLE
READ function
Function Mode
Standby Mode
Byte Access (8 bits)
Common Memory
/REG
D15-D8
X
High-Z
H
High-Z
H
High-Z
H
Odd-Byte Even-Byte
H
Odd-Byte
Attribute Memory
/REG
D15-D8
X
High-Z
L
High-Z
L
High-Z
L
Not Valid Even-Byte
L
Not Valid
/CE2 /CE1
H
H
H
L
L
A0
X
L
H
X
X
/OE
X
L
L
L
L
/WE
X
H
H
H
H
D7-D0
High-Z
Even-Byte
Odd-Byte
D7-D0
High-Z
Even-Byte
Not Valid
H
L
L
L
H
Word Access (16 bits)
Odd-Byte Only Access
WRITE function
Standby Mode
Byte Access (8 bits)
High-Z
High-Z
H
H
H
H
L
L
X
L
H
X
H
H
X
L
L
X
H
H
X
X
X
X
X
L
L
X
X
X
X
Even-Byte
Odd-Byte
Even-Byte
X
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