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參數資料
| 型號： | SRS3120HEU |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | SRS3120HEU |
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
_____
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5141, REV -
HIGH EFFICIENCY POWER RECTIFIER
DESCRIPTION: 1200 VOLT, 2.0 AMP ULTRA FAST RECTIFIER
FEATURES:
Single Chip Construction
Hermetically Sealed
Metallurgically Bonded
Ultra Fast Recovery: 60 ns max @ 25
oC
Low Reverse Leakage Current
For High Efficiency Applications
TX, TXV and S-Level Screening Available
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25°C unless otherwise specified
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Peak Inverse Voltage (PIV)
-
1200
Vdc
Average DC Output Current (IO)
TL = +75°C, L = 0”
-
2.0
Amps
Peak Single Cycle Surge Current
(IFSM)
tp = 8.3 ms Single Half Cycle Sine
Wave, Superimposed On Rated
Load
-
60
Amps(pk)
Operating and Storage Temp. (TOP
& TSTG)
-
-65
-
+175
°C
Breakdown Voltage (VBR)
IR = 50 μA
1200
Vdc
Maximum Forward Voltage (VF)
IF = 1.4 A
IF = 2.0 A
(300
μsec pulse, duty cycle < 2%)
-
1.6
1.95
Volts
Maximum Instantaneous Reverse
Current At Rated PIV
TA = +25°C
TA = +150°C
-
4
600
μAmps
Reverse Recovery Time (trr)
IF=0.5A, IR=1.0A, IRR=0.25A
TA = 25°C
TA = 125°C
-
60
200
nsec
Thermal Resistance (RΘJL, AXIAL)
(RΘJEC, MELF)
Junction to Lead, d = 0.375”
Junction to End Caps
-
22
6.5
°C/W
SRS3120HE
SRS3120HEU
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