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參數(shù)資料
| 型號(hào)： | SRM2BV813LLBT |
| 廠商： | 愛(ài)普生（中國(guó)）有限公司 |
| 英文描述： | Super Low Voltage and Low Current Consumption、8M-Bit（524,288Words x 16-Bit）Asynchronous Static RAM(超低電壓和小電流、8M位（524,288字 x 16位）異步靜態(tài)RAM) |
| 中文描述： | 超級(jí)低電壓和低電流消耗，8分位（524,288字× 16位）異步靜態(tài)RAM（超低電壓和小電流，分位（524,288字× 16位）異步靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | SRM2BV813LLBT |
1
Rev.1.0
I
DESCRIPTION
The SRM2BV813LLBT
7
is a 524,288 words x 16-bit asynchronous, random access memory on a monolithic
CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
with back-up batteries. The asynchronous and static nature of the memory requires no external clock and no
refreshing circuit. It is possible to control the data width by the data byte control. 3-state output allows easy
expansion of memory capacity. The temperature range of the SRM2BV813LLBT
7
is from –40 to 85
°
C, and it is
suitable for the industrial products.
I
FEATURES
G
Fast Access time........................ 70ns (2.4V)
G
Low supply current ..................... LL Version
G
Completely static........................ No clock required
G
Supply voltage............................ 2.4V to 3.0V
G
3-state output with wired-OR capability
G
Non-volatile storage with back-up batteries
G
Package ..................................... SRM2BV813LLBT
TFBGA-48 pin (Tape CSP)
I
BLOCK DIAGRAM
I/O Buffer
16
I/O1
I/O16
CS1
CS2
OE
WE
LB
UB
O
C
L
C
C
L
10
9
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A
Memory Cell Array
1024 x 512 x 16
Column Gate
1024
512
512 x 16
X
Y
8M-bit Static RAM
PF1107-01
SRM2BV813LLBT
7
G
Super Low Voltage Operation and Low Current Consumption
G
Access Time 70ns (2.4V)
G
524,288 Words x 16-bit Asynchronous
G
Wide Temperature Range
Supe LowVotage
Poducs
Opeaion
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