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參數(shù)資料
| 型號： | SRL2020S |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 93K |
| 代理商： | SRL2020S |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0155A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SRL2020 __ __
|
└
|
└
|
└
└ Screening2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
__ = Axial Leaded
BT = Button Tab
Voltage
20 = 200 V
Current
20 = 20 A
SRL2020 Series
20 AMP
HYPER FAST RECTIFIER
200 Volts
35 nsec
Features:
Replaces JEDEC packages: DO-4, TO-254, and TO-257
Hyper fast recovery
Low reverse leakage current
Hermetically sealed void-free construction
3/
Monolithic single chip construction
High surge rating
Low thermal resistance
Higher voltages available - contact factory
Surface mount replacement for 1N5816 and 1N6659
TX, TXV, and Space level screening available
MAXIMUM RATINGS
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRRM
VRWM
VR
200
Volts
Average Rectified Forward Current
(Resistive load, 60Hz sine wave, Tc=100°C, TL=55°C )
IO
20
Amps
Peak Surge Current
(8.3 ms pulse, half sine wave superimposed on Io, allow junction to reach equilibrium
between pulses, TA=25
oC)
IFSM
400
Amps
Junction and Storage Temperature
TJ & TSTG
-65 to +175
oC
Maximum Thermal Resistance
Junction to anode terminal
Axial @ 1/8”
Button Tab
RJC
6.0
1.5
oC/W
Notes:
1/ For ordering information, price, operating curves, and availability, contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ PIND testing not required on void free devices per MIL-PRF-19500.
Axial Leaded (__)
SRL Button (BT)
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