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參數(shù)資料
| 型號： | SRF820H |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-6 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | SRF820H |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.220 / 5.59
.007 / 0.18
.510 / 12.95
.725 / 18.42
H
DIM
K
L
I
J
.970 / 24.64
.980 / 24.89
.170 / 4.32
N
M
.120 / 3.05
.135 / 3.43
.150 / 3.43
.160 / 4.06
.125 / 3.18
.090 / 2.29
.105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
4
B
2x N
FULL R
H
.835 / 21.21
.865 / 21.97
.210 / 5.33
.200 / 5.08
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CBO
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 2.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
UNITS
V
V
V
mA
---
60
4.0
5.0
20
80
C
OB
V
CB
= 28 V
f = 1.0 MHz
80
pF
P
G
P
OUT
V
CC
= 28 V
P
IN
= 70 W f = 400 MHz
8.4
70
dB
W
NPN SILICON RF POWER TRANSISTOR
SRF820H
DESCRIPTION:
The
ASI SRF820H
is Designed for
High Power Class C Amplifier
applications, in 225 to 400 MHz
Military Communication Equipment.
FEATURES:
Internal Input Matching Network
P
G
= 8.4 dB at 70 W/400 MHz
Omnigold
Metalization System
Available in matched pairs and
quads
MAXIMUM RATINGS
I
C
8.0 A
V
CBO
60 V
V
CEO
30 V
V
EBO
4.0 V
P
DISS
220 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.25 °C/W
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
ORDER CODE: ASI10474
1
2
3
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