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參數(shù)資料
| 型號： | SRF3040 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers |
| 中文描述： | 開關(guān)模式全塑電力雙肖特基整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SRF3040 |
MOSPEC
SRF3030 Thru SRF3060
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 125
Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
MAXIMUM RATINGS
SRF30
Characteristic
Symbol
30
35
40
45
50
60
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
25
28
32
35
42
V
Average Rectifier Forward Current
Total Device (Rated V
R
),T
C
=100
I
F(AV)
15
30
A
Peak Repetitive Forward Current
(Rate V
R
, Square Wave, 20kHz)
I
FM
30
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
I
FSM
250
A
Operating and Storage Junction
Temperature Range
T
J
, T
STG
-65 to +125
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
30-60 VOLTS
ITO-220AB
MILLIMETERS
MIN
15.05 15.15
13.35 13.45
10.00 10.10
6.55
2.65
1.55
1.15
0.55
2.50
3.00
1.10
0.55
4.40
1.15
2.65
3.35
3.15
DIM
MAX
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
O
Q
6.65
2.75
1.65
1.25
0.65
2.60
3.20
1.20
0.65
4.60
1.25
2.75
3.45
3.25
ELECTRIAL CHARACTERISTICS
SRF30
Characteristic
Symbol
30
35
40
45
50
60
Unit
Maximum Instantaneous Forward Voltage
( I
F
=15 Amp T
C
= 25
( I
F
=15 Amp T
C
= 100
)
)
V
F
0.55
0.50
0.65
0.58
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25
( Rated DC Voltage, T
C
= 125
)
)
I
R
1.0
30
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SRF3050 | Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers |
| SRF3060 | Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers |
| SRF446 | N-Channel Enhancement Mode RF Power MOSFET(250W-250V-65MHz)(N溝道增強型射頻功率MOS場效應(yīng)管(250W-250V-65MHz)) |
| SRF447 | N-Channel Enhancement Mode RF Power MOSFET(250W-250V-65MHz)(N溝道增強型射頻功率MOS場效應(yīng)管(250W-250V-65MHz)) |
| SRF448A | N-Channel Enhancement Mode RF Power MOSFET(250W-150V-65MHz)(N溝道增強型射頻功率MOS場效應(yīng)管(250W-150V-65MHz)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SRF3040C | 制造商:MIC 制造商全稱:MIC GROUP RECTIFIERS 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SRF3040CE | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers |
| SRF3045 | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers |
| SRF3045C | 制造商:MIC 制造商全稱:MIC GROUP RECTIFIERS 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SRF3045CE | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers |
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