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參數(shù)資料
| 型號(hào)： | SRAD860 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 8.0 AMPS. Schottky Barrier Rectifiers |
| 中文描述： | 8.0安培。肖特基 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | SRAD860 |
- 118 -
Marking
0 5
0 5
30
5
.250(6.55)
.246(6.45)
.211(5.36)
.207(5.26)
.
.
.
.
.024(0.60)
.031(0.80)
.
.
.
.
.093(2.35)
.089(2.25)
.013(0.54)
.011(0.48)
.
.
.053(1.30)
.045(1.10)
.059(1.45)
.039(0.95)
.112(2.85)
.092(2.35)
.211(5.36)
.207(5.26)
.013(0.54)
.011(0.48)
1
2
3
SRAD820
THRU
SRAD860
8.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
20 to 60 Volts
Current
8.0 Amperes
D
-
PAK
Features
Low forward voltage
125
C operating junction temperature
Epoxy meets UL94, VO at 1/8”
Guaranteed reverse avalanche
Compact size
Lead formed for surface mount
Mechanical Data
Cases: Epoxy, molded
Weight: 0.4 gram (approximately)
Finish: All external surfaces corrosion resistant and
terminal leads are readily solderable
Lead and mounting surface temperature for
soldering purposes: 260
C max. for 10 seconds
Shipped 75 units per plastic tube
Marking: SRAD820, SRAD830, SRAD840,
SRAD850, SRAD860
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Dimensions in inches and (millimeters)
Symbol SRAD
820
20
14
20
SRAD
830
30
21
30
SRAD
840
40
28
40
SRAD
850
50
35
50
SRAD
860
60
42
60
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
T
C
= 88
℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 HZ)
Maximum Instantaneous Forward Voltage at
@8.0A
Maximum D.C. Reverse Current @ Tc=25
℃
at Rated DC Blocking Voltage(Note 1) @ Tc=100
℃
Maximum Thermal Resistance Per Leg
(Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
1
. Pulse Test: Pulse Width = 300us, 2.0% Duty Cycle.
2.
Thermal Resistance from Junction to Case and Thermal Resistance from Junction to
Ambient.
V
RRM
V
RMS
V
DC
V
V
V
I
(AV)
8.0
A
I
FSM
75
A
V
F
0.55
0.7
V
I
R
1.4
35
6
80
mA
mA
℃
/W
℃
℃
R
θ
JC
R
θ
JA
T
J
T
STG
-65 to +125
-65 to +150
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