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參數(shù)資料
| 型號： | SRA Series |
| 英文描述： | SRAM Memory Card 256KB Through 8MB(256KB - 8MB靜態(tài)RAM存儲器卡) |
| 中文描述： | SRAM的記憶卡，通過8MB的256KB的（256KB的- 8MB的靜態(tài)RAM的存儲器卡） |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 113K |
| 代理商： | SRA SERIES |
June 2000 Rev. 5 - ECO #12895
5
PCMCIA Flash Memory Card
SRA Series
PC Card Products
Absolute Maximum Ratings
(2)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
0°C to +60 °C
-40°C to +85 °C
0°C to +60 °C
-40°C to +85 °C
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot to
-2.0V or overshoot to VCC +2.0V for periods
less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than those
indicated in the operational sections of this
specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Sym
ICC
Parameter
VCC Active Current
Density
64KB
128KB
256KB
512KB
1MB
to
8MB
All
Notes
1
Min
Typ
(3)
90
90
90
90
110
Max
180
180
180
180
190
Units
mA
Test Conditions
VCC = 5.25V
tcycle = 150ns
ICCS
VCC Standby Current
2,4
< 0.1
< 1
10
mA
VCC = 5.25V
Control Signals = VCC
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
ILI
Input Leakage Current
All
5,6
±20
μA
ILO
Output Leakage Current
All
6
±20
μA
VIL
VIH
Input Low Voltage
Input High Voltage
All
All
6
6
0
0.8
VCC
+0.5
0.4
VCC
V
V
3.85
VOL
VOH
Output Low Voltage
Output High Voltage
All
All
6
6
V
V
IOL = 3.2mA
IOH = -2.0mA
VCC-
0.4
Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE
1
#, CE
2
#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to
internal pull-up resistors.
Battery Characteristics
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
SRA11-14
Type I
min 10
-
32
22
12
12
-
SRA01-04
Type I
min 10
24
18
12
7
7
-
Parameter
Battery Life
Density
All
256KB
512KB, 1MB
2MB
4MB
6MB
8MB
Notes
(1)
(2)
Type II
Units
years
Conditions
Normal operation, T=25C
T=25C
Battery backup time is a
calculated value and is not
guaranteed. This should
not be used to schedule
battery recharging.
60
45
30
17
17
12
Battery
Backup Time
months
(typical)
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
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