參數(shù)資料
型號: SQD200A40
廠商: Electronic Theatre Controls, Inc.
英文描述: TRANSISTOR MODULE
中文描述: 晶體管模塊
文件頁數(shù): 1/2頁
文件大小: 100K
代理商: SQD200A40
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SQD200A40/60
TRANSISTOR MODULE
UL;E76102 M
Maximum Ratings
Tj
25
unless otherwise specified
Ratings
SQD200A40 SQD200A60
400
400
10
200
400
200
12
1250
40 to
150
40 to
125
2500
2.7
28
2.7
28
380
Electrical Characteristics
Symbol
Item
Conditions
Unit
V
CBO
V
CEX
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
J unction Temperature
Storage Temperature
Isolation Voltage
600
600
V
V
V
A
A
A
W
V
BE
2V
=pw
1ms
I
C
I
B
P
T
T
j
Tstg
V
ISO
T
C
25
A.C.1minute
Recommended Value 1.5
-
2.5
Recommended Value 1.5
-
2.5
Typical Value
V
Mounting
Torque
M5
M5
Terminal
15
-
25
15
-
25
N m
f
B
)
(
Mass
g
95max
6
Unit
A
Symbol
Item
Conditions
Ratings
Min.
Max.
2.0
800
75
2.0
2.5
2.0
12.0
3.0
1.4
0.1
0.3
Unit
I
CBO
I
EBO
Collector Cut-off Current
Emitter Cut-off Current
V
CB
V
EB
V
CBO
V
EBO
mA
mA
300
450
400
600
V
CEO SUS
Collector Emitter
Sustaning Voltage
SQD200A40
SQD200A60
SQD200A40
SQD200A60
Ic
1A
V
V
CEX SUS
Ic
40A
I
B2
8A
V
h
FE
DC Current Gain
Ic
Ic
Ic
Ic
200A
200A
200A
200A
V
CE
V
CE
I
B
I
B
2V
5V
100
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
2.7A
2.7A
V
V
s
V
/
W
On Time
Storage Time
Fall Time
Transistor part
Diode part
Vcc
I
B1
300V
4A
Ic
200A
4A
I
B2
Ic
200A
Rth(j-c)
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
SQD200A
is a Darlington power transistor module which a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction,
I
C
200A, V
CEX
400
/
600V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
V
EBO
10V for faster switching speed.
Applications
Motor Control
VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
相關PDF資料
PDF描述
SQD200A60 TRANSISTOR MODULE
SQD400AA120 TRANSISTOR MODULE
SQD400BA60 TRANSISTOR MODULE
SQD400AA100 TRANSISTOR MODULE
SQFPT80C LSI Assembly
相關代理商/技術參數(shù)
參數(shù)描述
SQD200A60 制造商:n/a 功能描述:Darlington Module
SQD23N06-31L 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQD23N06-31L-GE3 功能描述:MOSFET 60V 23A 100W 31mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SQD25N06-22L 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET
SQD25N06-22L-GE3 功能描述:MOSFET 60V 25A 62W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube