參數(shù)資料
型號(hào)： SQ741
廠商： Polyfet RF Devices
英文描述： SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述： 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 37K
代理商： SQ741
polyfet rf devices
SQ741
11
Push - Pull
AQ
17.0
0.2
48.0
1.40 C/W
125
0.8
3.50
1.0
55
2.50
1.00
4.5
110
0.05
125
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
0.40
10.00
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
0.40
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 0.40
400
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
400
400
Common Source Input Capacitance
125
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS (
50.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
50.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
50.0
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
VDMOS
Vgs = 0V, F = 1 MHz
50.0
Vds =
Vgs = 0V, F = 1 MHz
50.0
Vds =
Vgs = 0V, F = 1 MHz
50.0
REVISION 03/08/2001
25 C )
WATTS OUTPUT )
相關(guān)PDF資料
PDF描述
SQ742 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SR1080 SCHOTTKY BARRIER RECTIFIER
SR10A0 SCHOTTKY BARRIER RECTIFIER
SR341 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SR401 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SQ7414EN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET
SQ7414EN-T1-E3 功能描述:MOSFET 60V 5.6A 1.5W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SQ7415AEN-T1-GE3 功能描述:MOSFET 60V 16A 53W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SQ7415EN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ7415EN-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Automotive P-Channel 60 V (D-S) 175 °C MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*