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參數(shù)資料
| 型號： | SPX-G32S |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ultra-Fast-Recovery Rectifier Diodes (Power Surface Mount) |
| 中文描述： | 3 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 19K |
| 代理商： | SPX-G32S |
SPX-G32S
50
10
1
0.1
0.01
0.001
0
0.2
0.4
Forward Voltage V
F
(V)
0.6
0.8
1.0
1.2
1.4
50
10
1
0.1
0.01
0.0010
0.2
0.4
Forward Voltage V
F
(V)
0.6
0.8
1.0
1.2
1.4
120
125
130
135
140
145
150
0
1
2
3
V
R
=200V
4
SPX-62S
1
5
50
10
20ms
I
F
50
80
60
40
20
0
40
30
20
10
0
1
5
50
10
20ms
I
F
Ultra-Fast-Recovery Rectifier Diodes (Power Surface Mount)
Parameter
Absolute Maximum Ratings
I
(A)
Half-Single Shot
V
RM
(V)
I
F (AV)
V
F
(V)
I
F
(A)
I
/
I
RP
(mA)
I
/
I
RP
(mA)
Rth (j-c)
I
R
(
μ
A)
V
=
V
RM
max per element
I
(H)
(mA)
Tj
(
°
C)
Tstg
(
°
C)
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Others
SPX-G32S
200
3.0
6.0
50
80
0.98
3.0
50
10
30
100/100
100/200
–40 to +150
25
5.0
0.41
SPX-62S
A
60
80
Case Temperature Tc
(
°
C)
100
120
140
160
0
2
6
4
8
V
R
=200V
10
t/T 1/3
=
t/T=
t/T=
Sinewave
D.C.
t/T=
t/T=
t/T=
Sinewave
D.C.
=
T
a
100oC
60oC
25oC
=
T
a
100oC
60oC
25oC
6.5
±
0.4
5.4
±
0.4
2.3
±
0.4
5.4
4.1
4.9
1
±
0
5
±
0
2
±
0
0.8
±
0.1
0.8
1.5max
±
0.1
0.55
±
0.1
0.55
±
0.1
1.15
1
2
3
±
0.1
1
2.29
±
0.5
2.29
±
0.5
0 to 0.25
0
±
0
2.9
0
1
5
0
Type No.
Polarity
1
3
2
(Common to backside of case)
N.C
SPX-G32S
Anode
Cathode
Anode
SPX-62S
Anode
Cathode (Common)
V
=V
Ta=100
°
C
max per element
68
Fig.
max per
element
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
Case Temperature Tc
(
°
C)
A
F
(
Tc —I
F(AV)
Derating
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
A
F
(
Tc —I
F(AV)
Derating
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
A
Fig.
t
(ns)
t
(ns)
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|---|---|
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