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參數(shù)資料
| 型號： | SPU04N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Power Transistor(COOL MOS型功率晶體管) |
| 中文描述： | 酷MOS功率晶體管（酷馬鞍山型功率晶體管） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 146K |
| 代理商： | SPU04N60S5 |
Semiconductor Group
01 / 1999
2
SPU04N60S5
SPD04N60S5
Preliminary data
Electrical Characteristics
Parameter
Symbol
Values
typ.
Unit
at T
= 25 °C, unless otherwise specified
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
min.
max.
R
thJC
R
thJA
-
-
-
-
2.5
75
K/W
R
thJA
-
-
-
-
75
50
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= 0.25 mA
Gate threshold voltage, V
GS
= V
DS
I
D
= 200 μA,
T
j
= 25 °C
Zero gate voltage drain current,
V
DS
=
V
DSS
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 2.8 A
V
(BR)DSS
600
-
-
V
V
GS(th)
3.5
4.5
5.5
I
DSS
-
-
0.5
-
1
50
μA
I
GSS
-
-
100
nA
R
DS(on)
-
0.85
0.95
1current limited by Tjmax
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
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