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參數(shù)資料
| 型號： | SPPB04N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 268K |
| 代理商： | SPPB04N60S5 |
2004-03-30
Rev. 2.1
Page 1
SPU04N60S5
SPD04N60S5
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
V
DS
R
DS(on)
I
D
600
0.95
V
A
4.5
P-TO251.
P-TO252.
1
3
2
1
3
2
Type
SPU04N60S5
Package
P-TO251.
Ordering Code
Q67040-S4228
SPD04N60S5
P-TO252.
Q67040-S4202
Marking
04N60S5
04N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 3.4 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
I
D
= 4.5 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
I
D
4.5
2.8
I
D puls
E
AS
9
130
mJ
E
AR
0.4
4.5
A
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
50
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55... +150
°C
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