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參數(shù)資料
| 型號(hào)： | SPP6308S36RG |
| 英文描述： | Dual P-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 223K |
| 代理商： | SPP6308S36RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2006/12/12
Ver.1
Page 3
SPP6308
Dual P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
I
D(on)
V
DS
≤
-4.5V,V
GS
=-5V
V
GS
=-4.5V,I
D
=-1.0A
V
GS
=-2.5V,I
D
=-0.8A
R
DS(on)
V
GS
=-1.8V,I
D
=-0.5A
gfs
V
DS
=-10V,I
D
=-1.0A
V
SD
I
S
=-0.5A,V
GS
=0V
-20
-0.35
-0.8
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
On-State Drain Current
-2
A
0.42
0.58
0.75
1.5
-0.8
0.52
0.70
0.95
-1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
1.5
2.0
Gate-Source Charge
Q
gs
0.3
Gate-Drain Charge
Q
gd
V
DS
= -10V, V
GS
= -4.5 V
I
D
= -0.88 A
0.2
nC
Input Capacitance
C
iss
145
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
25
10
V
DS
=-10V,V
GS
=0V
f=1MHz
pF
t
d(on)
18
30
Turn-On Time
t
r
25
40
t
d(off)
15
45
Turn-Off Time
t
f
V
DD
=-10V,R
L
=20
,
I
D
≡
-0.5A
V
GEN
=-4.5V ,R
G
=6
12
20
ns
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