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參數資料
| 型號： | SPP3413 |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強型MOS管 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 209K |
| 代理商： | SPP3413 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unle
℃
ss otherwise noted)
2006/04/12
Ver.4
Page 3
SPP3413
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
I
D(on)
V
DS
≦
-5V,V
GS
=-4.5V
V
GS
=-4.5V,I
D
=-3.4A
V
GS
=-2.5V,I
D
=-2.4A
V
GS
=-1.8V,I
D
=-1.7A
V
GS
=-1.25V,I
D
=-1.0A
gfs
V
DS
=-5V,I
D
=-2.8A
V
SD
I
S
=-1.5A,V
GS
=0V
-20
-0.35
-0.8
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
On-State Drain Current
-6
A
0.076
0.097
0.123
0.185
6
-0.8
0.095
0.120
0.145
0.210
-1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
4.8
8
Gate-Source Charge
Q
gs
1.0
Gate-Drain Charge
Q
gd
V
DS
=-6V,V
GS
=-4.5V
I
D
≡
-2.8A
1.0
nC
Input Capacitance
C
iss
485
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
85
40
V
DS
=-6V,V
GS
=0V
f=1MHz
pF
t
d(on)
10
16
Turn-On Time
t
r
13
23
t
d(off)
18
25
Turn-Off Time
t
f
V
DD
=-6V,R
L
=6
I
D
≡
-1.0A,V
GEN
=-4.5V
R
G
=6
15
20
ns
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