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參數(shù)資料
| 型號： | SPP3095 |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 215K |
| 代理商： | SPP3095 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless
℃
otherwise noted)
2006/03/16
Ver.2
Page 3
SPP3095
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
=-24V,V
GS
=0V
I
DSS
V
DS
=-24V,V
GS
=0V
T
J
=85
℃
V
GS
=-10V,I
D
=-8A
R
DS(on)
V
GS
=-4.5V,I
D
=-6A
gfs
V
DS
=-10V,I
D
=-8A
V
SD
I
S
=-2.5A,V
GS
=0V
-30
-1.0
-3.0
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
0.083
0.117
8
-0.8
0.100
0.135
-1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
5.8
10
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
V
DS
=-15V,V
GS
=-10V
I
D
≡
-8A
1.5
nC
Input Capacitance
C
iss
226
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
87
19
V
DS
=-15V,V
GS
=0V
f=1MHz
pF
t
d(on)
9
20
Turn-On Time
t
r
9
20
t
d(off)
18
35
Turn-Off Time
t
f
V
DD
=-15V,R
L
=15
I
D
≡
-1.0A,V
GEN
=-10V
R
G
=6
6
20
ns
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