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參數(shù)資料
| 型號： | SPP17N80C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 333K |
| 代理商： | SPP17N80C3 |
2003-07-03
Page 1
SPP17N80C3, SPB17N80C3
SPA17N80C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
R
DS(on)
I
D
800
V
A
0.29
17
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
17N80C3
17N80C3
17N80C3
Type
SPP17N80C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4353
SPB17N80C3
P-TO263-3-2
Q67040-S4354
SPA17N80C3
P-TO220-3-31 Q67040-S4441
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
17
11
17
1)
11
1)
A
I
D puls
E
AS
51
51
A
I
D
=3.4A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=17A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
670
670
mJ
E
AR
0.5
0.5
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
17
17
A
±20
±
30
208
±20
±
30
42
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_B
-55...+150
°C
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