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參數(shù)資料
| 型號(hào)： | SPP1433A |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 221K |
| 代理商： | SPP1433A |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2006/05/20
Ver.1
Page 3
SPP1433A
P-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=-24V,V
GS
=0V
I
DSS
V
DS
=-24V,V
GS
=0V
T
J
=85
℃
I
D(on)
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-2.8A
V
GS
=-4.5V,I
D
=-2.5A
V
GS
=-2.5V,I
D
=-1.5A
V
GS
=-1.8V,I
D
=-1.0A
gfs
V
DS
=-10V,I
D
=-2.8A
V
SD
I
S
=-1.2A,V
GS
=0V
-30
-0.4
-1.0
±100
-1
V
nA
Zero Gate Voltage Drain Current
-5
uA
On-State Drain Current
-4
A
0.100
0.115
0.135
0.155
4
-0.8
0.120
0.135
0.165
0.195
-1.2
Drain-Source On-Resistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
5.8
0.8
1.5
380
55
40
6
3.9
40
15
V
DS
=-15V ,V
GS
=-4.5V
I
D
≡
-2.0A
nC
V
DS
=-15V ,V
GS
=0V
f=1MHz
pF
Turn-On Time
Turn-Off Time
V
DD
=-15V ,R
L
=15
I
D
≡
-1.0A ,V
GEN
=-10V
R
G
=3
ns
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