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參數(shù)資料
| 型號： | SPN6561 |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 210K |
| 代理商： | SPN6561 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2006/06/05
Ver.1
Page 3
SPN6561
Dual N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
=30V,V
GS
=1.0V
I
DSS
V
DS
=30V,V
GS
=0.0V
T
J
=55
℃
V
DS
≧
4.5V,V
GS
=10V
I
D(on)
V
DS
≧
4.5V,V
GS
=4.5V
V
GS
= 10V,I
D
=2.8A
R
DS(on)
V
GS
=4.5V,I
D
=2.1A
gfs
V
DS
=4.5V,I
D
=2.5A
V
SD
I
S
=1.25A,V
GS
=0V
30
1.0
3.0
±100
1
V
nA
Zero Gate Voltage Drain Current
10
uA
6
4
On-State Drain Current
A
0.043
0.056
4.6
0.8
0.060
0.080
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
4.5
10
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
V
DS
=15V
GS
=10V
I
D
≡
2.5
1.0
nC
Input Capacitance
C
iss
240
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
110
17
V
DS
=15V
GS
=0V
f=1MHz
pF
t
d(on)
8
20
Turn-On Time
t
r
12
30
t
d(off)
17
35
Turn-Off Time
t
f
V
DD
=15R
L
=15
I
D
≡
1.0A,V
GEN
=10
R
G
=6
8
20
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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| SPN6561_09 | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
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| SPN6562S26RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:Dual N-Channel Enhancement Mode MOSFET |
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