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參數(shù)資料
| 型號(hào)： | SPN1423S32RG |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 226K |
| 代理商： | SPN1423S32RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2005/05/25
Ver.1
Page 3
SPN1423
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
=20V,V
GS
=0V
I
DSS
V
DS
=20V,V
GS
=0V
T
J
=55
℃
V
DS
≧
5V,V
GS
=4.5V
I
D(on)
V
DS
≧
5V,V
GS
=2.5V
V
GS
=4.5V,I
D
=2.8A
R
DS(on)
V
GS
=2.5V,I
D
=2.2A
gfs
V
DS
=5V,I
D
=2.8A
V
SD
I
S
=1.6A,V
GS
=0V
20
0.45
1.2
±100
1
V
nA
Zero Gate Voltage Drain Current
10
uA
5
4
On-State Drain Current
A
0.055
0.075
10
0.85
0.090
0.100
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
5.4
10
Gate-Source Charge
Q
gs
0.65
Gate-Drain Charge
Q
gd
V
DS
=10V,V
GS
=4.5V
I
D
≡
2.8A
1.4
nC
Input Capacitance
C
iss
340
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
115
33
V
DS
=10V,V
GS
=0V
f=1MHz
pF
t
d(on)
12
25
Turn-On Time
t
r
36
60
t
d(off)
34
60
Turn-Off Time
t
f
V
DD
=10V,R
L
=5.5
I
D
≡
2.8A,V
GEN
=4.5V
R
G
=6
10
25
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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| SPN1423S32RGB | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
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| SPN1443AS35RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
| SPN1443S32RG | 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET |
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