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參數(shù)資料
| 型號(hào)： | SPN1026 |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 雙N溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 267K |
| 代理商： | SPN1026 |
ELECTRICAL CHARACTERISTICS
(T
A
=25
2006/12/18
Ver.2
Page 3
SPN1026
Dual N-Channel Enhancement Mode MOSFET
Unless otherwise noted)
℃
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±20V
V
DS
=50V,V
GS
=0V
I
DSS
V
DS
=50V,V
GS
=0V
T
J
= 85
℃
V
GS
=10V,I
D
=0.50A
R
DS(on)
V
GS
= 5V,I
D
=0.30A
I
SD
I
SDM
(2)
Gfs(1) V
DS
= 10 V, I
D
= 0.5 A
V
SD
(1)
V
GS
= 0 V, I
S
= 0.2A
60
1.0
1.7
2.5
±100
10
V
nA
Zero Gate Voltage Drain Current
100
nA
2.8
3.5
0.6
0.85
4.0
5.0
0.32
1.4
1.5
Drain-Source On-Resistance
Source-drain Current
Source-drain Current (pulsed)
Forward Transconductance
Diode Forward Voltage
A
A
S
V
Dynamic
Total Gate Charge
Q
g
1.4
2.0
Gate-Source Charge
Q
gs
0.8
Gate-Drain Charge
Q
gd
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 5 V
0.5
nC
Input Capacitance
C
iss
43
Output Capacitance
Reverse Transfer Capacitance
C
oss
C
rss
20
6
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
pF
t
d(on)
5
Turn-On Time
t
r
15
t
d(off)
7
Turn-Off Time
t
f
V
DD
= 30 V, I
D
= 0.5 A
R
G
= 4.7
V
GS
= 4.5 V
8
ns
(1) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
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