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參數(shù)資料
| 型號： | SPN1012S52RG |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 209K |
| 代理商： | SPN1012S52RG |
ELECTRICAL CHARACTERISTICS
(T
A
=25
Unless otherwise noted)
℃
2007/01/ 02
Ver.2
Page 3
SPN1012
N-Channel Enhancement Mode MOSFET
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V
(BR)DSS
V
GS
=0V,I
D
= 250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
I
DSS
V
DS
= 20V,V
GS
=0V
T
J
=55
℃
I
D(on)
V
DS
≥
4.5V,V
GS
=5V
V
GS
=4.5V,I
D
=0.65A
V
GS
=2.5V,I
D
=0.55A
R
DS(on)
V
GS
=1.8V,I
D
=0.45A
gfs
V
DS
=10V,I
D
=0.4A
V
SD
I
S
=0.15A,V
GS
=0V
20
0.35
1.0
100
1
V
nA
Zero Gate Voltage Drain Current
5
uA
On-State Drain Current
0.7
A
0.26
0.32
0.42
1.0
0.8
0.38
0.45
0.80
1.2
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
S
V
Dynamic
Total Gate Charge
Q
g
1.2
1.5
Gate-Source Charge
Q
gs
0.2
Gate-Drain Charge
Q
gd
V
DS
=10V,V
GS
=4.5V,
I
D
≡
0.6A
0.3
nC
t
d(on)
5
10
Turn-On Time
t
r
8
15
t
d(off)
10
18
Turn-Off Time
t
f
V
DD
=10V,R
L
=10
,
I
D
≡
0.5A
V
GEN
=4.5V ,R
G
=6
1.2
2.8
ns
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