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參數(shù)資料
| 型號： | SPN03N60S5 |
| 廠商： | SIEMENS AG |
| 英文描述： | Cool MOS Small-Signal-Transistor(Cool MOS 小信號晶體管) |
| 中文描述： | 酷馬鞍山小信號晶體管（酷馬鞍山小信號晶體管） |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SPN03N60S5 |
1999-10-11
4
SPN03N60S5
Preliminary data
Electrical Characteristics
Parameter
at T
= 25 °C, unless otherwise specified
Gate Charge Characteristics
Gate to source charge
V
DD
= 350 V,
I
D
= 0.7 A
Gate to drain charge
V
DD
= 350 V,
I
D
= 0.7 A
Total gate charge
V
DD
= 350 V,
I
D
= 0.7 A,
V
GS
= 0 to 10 V
Symbol
Values
typ.
Unit
min.
max.
Q
gs
-
3
-
nC
Q
gd
-
7.5
-
Q
g
-
12.8
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.7 A
Reverse recovery time
V
R
= 350 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= 350 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
0.7
A
I
SM
-
-
3
V
SD
-
0.85
1.05
V
t
rr
-
200
-
ns
Q
rr
-
0.9
-
μC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SPN04N60C2 | Cool MOS⑩ Power Transistor |
| SPN04N60S5 | Cool MOS⑩ Power Transistor |
| SPP03N60S5 | Cool MOS Power-Transistor(Cool MOS 功率晶體管) |
| SPP04N80C3 | Cool MOS⑩ Power Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPN03N60S5_05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated |
| SPN03N60S5NT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 T/R |
| SPN03N60S5T | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 T/R |
| SPN03N60S5X | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 |
| SPN03N60S5XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.7A 4-Pin(3+Tab) SOT-223 |
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