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參數(shù)資料
| 型號(hào)： | SPD5819SM-S |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | SPD5819SM-S |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0111M
DOC
DIMENSIONS
Dimension
Minimum
Maximum
A
.090”
.105”
B
.189”
.205”
C
.016”
.022”
Note: Dimensions are prior to solder dipping
Case Outline- Surface Mount Round Tab*
* For information on curves, contact the Factory Representative for Engineering Assistance.
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD5817SM
Thru
SPD5819SM
ELECTRICAL CHARACTERISTICS
3/
CHARACTERISTICS
SYMBOL
MAXIMUM
UNIT
Instantaneous Forward Voltage
Drop
(IF = 1 Adc, TA = 25°C, 300-500μs
Pulse)
SPD5817SM
SPD5818SM
SPD5819SM
VF1
0.55
0.65
0.70
Vdc
Instantaneous Forward Voltage
Drop
(IF = 1 Adc, TA = -55°C, 300-500μs
Pulse)
SPD5817SM
SPD5818SM
SPD5819SM
VF2
0.57
0.67
0.72
Vdc
Reverse Leakage Current
(Rated VR, TA = 25°C, 300μs Pulse Minimum)
IR1
0.50
mA
Reverse Leakage Current
(Rated VR, TA = 100°C, 300μs Pulse Minimum)
IR2
10
mA
Junction Capacitance
(VR = 5 Vdc, TA = 25°C, f = 1 MHz)
CJ
120
pF
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