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參數(shù)資料
| 型號： | SPD48 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0006 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 94K |
| 代理商： | SPD48 |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0085F
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SPD _ _ __ __
L
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level (for SM,
use –S)
L
Package
___ = Axial Leaded
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
L
Voltage
48 = 50 V
49 = 75 V
50 = 100 V
51 = 125 V
SPD48 thru SPD51
Series
200 mAMP
50-125 Volts
5 nsec
HYPER FAST RECTIFIER
Features:
Hyper Fast Recovery: 5 nsec maximum
Subminiature Surface Mount Package
Square Tab Mounting (Round Tabs Available)
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Replaces 1N4148, 1N4149, 1N4150, and
1N4151 types
TX, TXV and S – Level Screening Available
2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SPD48
SPD49
SPD50
SPD51
VRRM
VRWM
VR
50
75
100
125
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
Io
200
mAmps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow
Junction to Reach Equilibrium Between Pulses, TA = 25C)
IFSM
4
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +175
C
Maximum Thermal Resistance
Junction to Lead, L = 3/8”
Junction to End Tab
RθJL
RθJE
325
100
C/W
1/ For Ordering Information, Price, Operating
Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening
Flows Available on Request.
Axial
SM (Round)
SMS (Square)
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