參數(shù)資料
型號(hào): SPD30N03S2L-08
廠商: SIEMENS AG
英文描述: OptiMOSPower-Transistor( MOS 型功率晶體管)
中文描述: 的OptiMOS功率晶體管(馬鞍山型功率晶體管)
文件頁數(shù): 3/8頁
文件大?。?/td> 90K
代理商: SPD30N03S2L-08
2000-05-03
Page 3
SPD30N03S2L-08
Preliminary data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=30A
29
58
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
1900
750
170
12
90
25
25
2370
940
230
18
140
38
38
pF
V
DD
=15V,
V
GS
=4.5V,
I
D
=30A,
R
G
=3.6
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DD
=24V,
I
D
=30A
-
-
-
6
8
nC
14
47
18
59
V
DD
=24V,
I
D
=30A,
V
GS
=0 to 10V
Gate plateau voltage
V
(plateau)
V
DD
=24V,
I
D
=30A
-
3.1
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
30
A
Inverse diode direct current,
pulsed
I
SM
-
-
120
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=30A
-
-
-
0.9
33
32
1.3
40
40
V
ns
nC
V
R
=15V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
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