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參數(shù)資料
| 型號(hào)： | SPD10N10 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CAP 470PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | SPD10N10 |
Data Sheet
1
05.99
SIPMOS
Power Transistor
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
100
0.2
10
V
DS
R
DS(on)
I
D
V
A
Features
N channel
Enhancement mode
Avalanche rated
dvdt rated
Pin 1
G
Pin 2
D
Pin 3
S
Packaging
Tape and Reel
Tube
Type
SPD10N10
SPU10N10
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4119-A2
Q67040-S4111-A2
Maximum Ratings
, at
T
j = 25 C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 C
T
C
= 100 C
Pulsed drain current
T
C
= 25 C
Avalanche energy, single pulse
I
D
= 10 A,
V
DD
= 25 V,
R
GS
= 25
Avalanche energy, periodic limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 10 A,
V
DS
= 0 V, d
i
/d
t
= 200 A/μs
Gate source voltage
Power dissipation
T
C
= 25 C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
Unit
A
Value
10
6.3
I
D
I
Dpulse
40
mJ
E
AS
59
4
6
kV/μs
E
AR
d
v
/d
t
V
GS
P
tot
±
20
40
V
W
T
j ,
T
stg
C
-55... +175
55/150/56
Preliminary Data
SPD 10N10
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