參數(shù)資料
型號(hào): SPC5604CF2MLL6
廠商: Freescale Semiconductor
文件頁數(shù): 63/109頁
文件大小: 0K
描述: IC MCU 32BIT 512KB FLASH 100LQFP
標(biāo)準(zhǔn)包裝: 90
系列: MPC56xx Qorivva
核心處理器: e200z0h
芯體尺寸: 32-位
速度: 64MHz
連通性: CAN,I²C,LIN,SCI,SPI
外圍設(shè)備: DMA,POR,PWM,WDT
輸入/輸出數(shù): 79
程序存儲(chǔ)器容量: 512KB(512K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 48K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 28x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 100-LQFP
包裝: 托盤
Package pinouts and signal descriptions
MPC5604B/C Microcontroller Data Sheet, Rev. 11.1
Freescale Semiconductor
57
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units
will experience single bit corrections throughout the life of the product with no impact to product reliability.
3.19.2
Flash power supply DC characteristics
Table 31 shows the power supply DC characteristics on external supply.
Table 29. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase cycles
per block over the operating
temperature range (TJ)
16 KB blocks
100,000
cycles
32 KB blocks
10,000 100,000
128 KB blocks
1,000 100,000
Retention CC C Minimum data retention at 85 °C
average ambient temperature1
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with
0–1,000 P/E cycles
20
years
Blocks with
1,001–10,000 P/E cycles
10
Blocks with
10,001–100,000 P/E cycles
5—
Table 30. Flash read access timing
Symbol
C
Parameter
Conditions1
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified
Max
Unit
fREAD CC P Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20
Table 31. Flash memory power supply DC electrical characteristics
Symbol
C
Parameter
Conditions1
Value
Unit
Min
Typ Max
IFREAD2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on read access
Code flash memory module read
fCPU = 64 MHz3
—15
33
mA
Data flash memory module read
fCPU = 64 MHz3
—15
33
IFMOD2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on matrix
modification (program/erase)
Program/Erase ongoing while
reading code flash memory
registers fCPU =64 MHz3
—15
33
mA
Program/Erase ongoing while
reading data flash memory
registers fCPU =64 MHz3
—15
33
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