參數(shù)資料
型號(hào)： SPB20N60S5
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 163K
代理商： SPB20N60S5
2002-08-12
Page 1
SPP20N60C2, SPB20N60C2
SPA20N60C2
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Product Summary
V
DS
@
T
jmax
650
0.19
20
V
A
R
DS(on)
I
D
P-TO220-3-31
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
20N60C2
20N60C2
20N60C2
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31 Q67040-S4333
Ordering Code
Q67040-S4320
Q67040-S4322
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
20
1)
13
1)
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
20
13
A
I
D puls
E
AS
40
690
40
690
A
mJ
I
D
=10A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax2)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
E
AR
1
1
I
AR
d
v
/d
t
20
6
20
6
A
V/ns
I
S
= 20 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
μ
s,
T
jmax
=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
208
±20
±
30
34.5
V
W
SPP_B
-55...+150
°C
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