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參數(shù)資料
| 型號(hào)： | SPB07N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | SPB07N60S5 |
2002-08-12
Page 1
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Product Summary
V
DS
@
T
jmax
650
0.6
7.3
V
A
R
DS(on)
I
D
P-TO220-3-31
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
07N60C2
07N60C2
07N60C2
Type
SPP07N60C2
SPB07N60C2
SPA07N60C2
Package
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31 Q67040-S4331
Ordering Code
Q67040-S4309
Q67040-S4310
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
7.3
1)
4.6
1)
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
7.3
4.6
A
I
D puls
E
AS
14.6
230
14.6
230
A
mJ
I
D
=5.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax2)
I
D
=7.3A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
E
AR
0.5
0.5
I
AR
d
v
/d
t
7.3
6
7.3
6
A
V/ns
I
S
= 7.3 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
μ
s,
T
jmax
=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
83
±20
±
30
32
V
W
SPP_B
-55...+150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SPB07N60S5_05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS Power Transistor |
| SPB07N60S5ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 7.3A TO-263 |
| SPB07N60S5E3045A | 制造商:Infineon Technologies AG 功能描述: |
| SPB-08 | 功能描述:電線鑒定 0-90 A-Z + - / BOOK RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長度:1 in |
| SPB08N03L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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