參數(shù)資料
型號: SP701
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大小: 36K
代理商: SP701
S1A 1 DIE ID & GM Vs VG
0.10
1.00
10.00
0
2
4
6
Vgs in Volts
8
10
12
14
I
Id
gM
S1A 1 DIE CAPACITANCE
1
10
100
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
S P 701 P OUT VS P IN Freq= 500MHz, VDS = 28V, Idq= .2A
0
5
10
15
20
25
30
0
0.5
1
1.5
2
P IN IN WAT T S
2.5
3
3.5
4
4.5
5
7.00
8.00
9.00
10.00
11.00
12.00
13.00
Pout
Gain
Efficiency = 55%
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
SP701
S1A 1 DIE IV
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
16
18
20
VVDS IN VOLTS
I
vg=2v
Vg=4v
vg=8v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/28/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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