參數(shù)資料
型號(hào)： SP600
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Half Bridge 500VDC Driver
中文描述： 0.5 A HALF BRDG BASED MOSFET DRIVER, PDIP22
封裝： PLASTIC, DIP-22
文件頁數(shù)： 2/7頁
文件大?。?/td> 74K
代理商： SP600
2
Absolute Maximum Ratings
Full Temperature Range, All
Voltage Referenced to V
SS
Unless Otherwise Noted. Note 1, Note 2.
Low Voltage Power Supply, V
BIAS
(Note 1) . . . . . . . . . . . . . . 18V
DC
Floating Low Voltage Boot Strap . . . . . . . . . . . . . . . . . . . . . . 18V
DC
Power Supply to Phase, V
BS
Low Voltage Signal Pins
Fault, I
TRIPSEL
, V
DD
, TRIP
L
, CL1, G2L . . .-0.5V
DC
to V
DD
+0.5
G1L, D1L, V
DF
, TOP, BOT
CL2, TRIP
U
, G1U, G2U, D1U to Phase. . . . -0.5
VDC
to V
BS
+0.5
High Voltage Pins
Phase, V
PHASE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
DC
(V
BS
, V
OUT
, TRIP
U
, CL2, G2U and D1U: 0V-18V Higher Than
Phase)
Dynamic High Voltage Rating Phase,. . . . . . . . . . . . . 10,000V/
μ
s
DV
PHASE/DT
NOTES:
1. Care must be taken in the application of V
BIAS
as not to impose high peak dissipation demands on a relatively small metallized noise dropping resistor (R
ND
).
Prolonged high peak currents may result if +15V
DC
is applied abruptly and/or if the local bypass capacitor C
DD
is large. It is suggested that C
DD
be
≤
10MFD.
If it is desirable to switch the 15V
DC
source or if a C
DD
is larger, additional series impedance may be required.
2. Consult factory for additional package offerings.
Thermal Information
Thermal Resistance
Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Package Power Dissipation at T
A
= +85
o
C, P
O
Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Ambient Temperature Range, T
A
. . . . . . .-25
o
C to +85
o
C
Storage Temperature Range, T
S
. . . . . . . . . . . . . . .-40
o
C to +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . .+265
o
C
θ
JA
75
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
(V
BIAS
= 15V, Pulsed <300ms), Unless Otherwise Noted, All Parameters Referenced to
V
SS
Except TRIP
U
, CL2, G1U, D1U, and V
BS
Referenced to PHASE. D
F
: V
DF
to V
BS
,
C
F
: V
BS
to PHASE
PARAMETER
SYMBOL
TEMP
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
Input Current (5V < V
TOP
, V
BOT
, V
TRIPSEL
< 15V)
I
IN
+25
o
C
-
20
30
μ
A
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
-
30
33
μ
A
I
BIAS
Quiescent Current (All Inputs Low)
I
BIASL
-
1.7
2.05
mA
-
1.7
2.1
mA
I
BIAS
Quiescent Current
(V
OUT
≥
V
BIAS
, and All Inputs Low)
I
BIASH
-
1.7
2.05
mA
-
1.7
2.1
mA
I
BS
Quiescent Current Bootstrap Supply
I
BS
-
875
1000
μ
A
-
900
1060
μ
A
TOP Threshold Level
V
TOP
7
8
9
V
6.95
8
9.1
V
BOTTOM Threshold Level
V
BOT
7
8
9
V
6.9
8
9.1
V
Current TRIPSELECT Threshold Level
V
TRIPSEL
7
8
9
V
6.95
8
9.1
V
Trip Lower and Upper Comparator Threshold
Level - Normal (I
TRIPSEL
= V
SS
)
V
TRIP L/UN
90
105
125
mV
90
105
127
mV
Trip Lower and Upper Comparator Threshold
Level - Boost (I
TRIPSEL
= V
DD
) % of Measured
V
TRIP L/UN
V
TRIP L/UB
110
130
150
%
109
130
152
%
Under Voltage Lockout Thresholds (V
DD
and V
BS
)
V
LOCK
+25
o
C
9
10
11.5
V
-40
o
C to +85
o
C
+25
o
C
-40
o
C to +85
o
C
9.7
10.5
11.8
V
Phase Out of Status Voltage Threshold (PHASE)
V
OSVT
5
7
9
V
4.7
7
9.6
V
SP600
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