參數(shù)資料
型號: SN74LVT574DWRE4
廠商: TEXAS INSTRUMENTS INC
元件分類: 總線收發(fā)器
英文描述: LVT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20
封裝: PLASTIC, SOIC-20
文件頁數(shù): 8/15頁
文件大?。?/td> 471K
代理商: SN74LVT574DWRE4
SN54LVT574, SN74LVT574
3.3-V ABT OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS
WITH 3-STATE OUTPUTS
SCBS139D – MAY 1992 – REVISED JULY 1995
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
FUNCTION TABLE
(each flip-flop)
INPUTS
OUTPUT
OE
CLK
D
Q
L
H
L
LL
L
H or L
X
Q0
H
X
Z
logic symbol
logic diagram (positive logic)
OE
1D
2
1D
3
2D
4
3D
5
4D
6
5D
11
CLK
1Q
19
2Q
18
3Q
17
4Q
16
5Q
15
6Q
14
7Q
13
8Q
12
7
6D
8
7D
9
8D
EN
1
OE
CLK
1D
1Q
1
11
2
19
To Seven Other Channels
1D
C1
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC
– 0.5 V to 4.6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI (see Note 1)
– 0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range applied to any output in the high state or power-off state, VO (see Note 1)
– 0.5 V to 7 V
. . . .
Current into any output in the low state, IO: SN54LVT574
96 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SN74LVT574
128 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current into any output in the high state, IO (see Note 2): SN54LVT574
48 mA
. . . . . . . . . . . . . . . . . . . . . . . . .
SN74LVT574
64 mA
. . . . . . . . . . . . . . . . . . . . . . . . .
Input clamp current, IIK (VI < 0)
– 50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output clamp current, IOK (VO < 0)
– 50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum power dissipation at TA = 55°C (in still air) (see Note 3): DB package
0.6 W
. . . . . . . . . . . . . . . . . . . .
DW package
1.6 W
. . . . . . . . . . . . . . . . . . .
PW package
0.7 W
. . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. This current flows only when the output is in the high state and VO > VCC.
3. The maximum package power dissipation is calculated using a junction temperature of 150
°C and a board trace length of 750 mils.
For more information, refer to the
Package Thermal Considerations application note in the 1994 ABT Advanced BiCMOS Technology
Data Book, literature number SCBD002B.
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