參數(shù)資料
型號(hào): SN74ACT7807-40PAG
廠商: Texas Instruments
文件頁數(shù): 17/20頁
文件大小: 0K
描述: IC SYNC FIFO MEM 2048X9 64-TQFP
標(biāo)準(zhǔn)包裝: 160
系列: 74ACT
功能: 同步
存儲(chǔ)容量: 18.4K(2K x 9)
數(shù)據(jù)速率: 67MHz
電源電壓: 4.5 V ~ 5.5 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 64-TQFP
供應(yīng)商設(shè)備封裝: 64-TQFP(10x10)
包裝: 托盤
其它名稱: 296-4467
SN74ACT7807
2048
× 9
CLOCKED FIRST-IN, FIRST-OUT MEMORY
SCAS200D – JANUARY 1991 – REVISED APRIL 1998
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
offset values for AF/AE
The AF/AE flag has two programmable limits: the almost-empty offset value (X) and the almost-full offset
value (Y). They can be programmed after the FIFO is reset and before the first word is written to memory. If the
offsets are not programmed, the default values of X = Y = 256 are used. The AF/AE flag is high when the FIFO
contains X or fewer words or (2048 – Y) or more words.
Program enable (PEN) should be held high throughout the reset cycle. PEN can be brought low only when IR
is high and WRTCLK is low. On the following low-to-high transition of WRTCLK, the binary value on D0–D8 and
WRTEN1/DP9 is stored as the almost-empty offset value (X) and the almost-full offset value (Y). Holding PEN
low for another low-to-high transition of WRTCLK reprograms Y to the binary value on D0–D8 and
WRTEN1/DP9 at the time of the second WRTCLK low-to-high transition. While the offsets are programmed,
data is not written to the FIFO memory, regardless of the state of the write enables (WRTEN1/DP9, WRTEN2).
A maximum value of 1023 can be programmed for either X or Y (see Figure 1). To use the default values of
X = Y = 256, PEN must be held high.
X and Y
MSB
34
RESET
PEN
D0–D8
WRTCLK
WRTEN1/DP9
WRTEN2
IR
X and Y
Y
YMSB
Word 1
Figure 1. Programming X and Y Separately
相關(guān)PDF資料
PDF描述
MS3100F20-17S CONN RCPT 6POS WALL MNT W/SCKT
V150A48T500BG3 CONVERTER MOD DC/DC 48V 500W
MS27474T12B8SB CONN RCPT 8POS JAM NUT W/SCKT
V150A48T500BG2 CONVERTER MOD DC/DC 48V 500W
MS27467T9A98S CONN PLUG 3POS STRAIGHT W/SCKT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SN74ACT7808-20FN 功能描述:先進(jìn)先出 2048 X 9 asynch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74ACT7808-20PAG 功能描述:先進(jìn)先出 2048 X 9 asynch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74ACT7808-25FN 功能描述:先進(jìn)先出 2048 X 9 asynch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74ACT7808-25PAG 功能描述:先進(jìn)先出 2048 X 9 asynch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
SN74ACT7808-30FN 功能描述:先進(jìn)先出 2048 X 9 asynch 先進(jìn)先出 Memory RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝: