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參數資料
| 型號： | SN65EPT21DGKR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 時鐘及定時 |
| 英文描述： | 65EP SERIES, LOW SKEW CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8 |
| 封裝： | PLASTIC, MSOP-8 |
| 文件頁數： | 6/13頁 |
| 文件大?。?/td> | 429K |
| 代理商： | SN65EPT21DGKR |
SLLS970 – NOVEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
CONDITIONS
VALUE
UNIT
Absolute PECL mode supply voltage
VCC (GND = 0 V)
3.8
V
Sink/source current, VBB
±0.5
mA
PECL input voltage
GND = 0 V, VI ≤ VCC
0 to 3.8
V
Operating temperature range
–40 to 85
°C
Storage temperature range
–65 to 150
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATINGS
POWER RATING
THERMAL RESISTANCE,
DERATING FACTOR
POWER RATING
CIRCUIT BOARD
JUNCTION-TO-AMBIENT
PACKAGE
TA < 25°C
TA > 25°C
TA = 85°C
MODEL
NO AIRFLOW
(mW)
(mW/°C)
(mW)
SOIC
Low-K
719
139
7
288
High-K
840
119
8
336
MSOP
Low-K
469
213
5
188
High-K
527
189
5
211
THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
θJB
Junction-to-board thermal resistance
SOIC
79
°C/W
MSOP
120
θJC
Junction-to-case thermal resistance
SOIC
98
°C/W
MSOP
74
KEY ATTRIBUTES
CHARACTERISTICS
VALUE
Internal input pull-down resistor
50 k
Internal input pull-up resistor
50 k
Moisture sensitivity level
Level 1
Flammability rating (oxygen index: 28 to 34)
UL 94 V-0 at 0.125 in
Electrostatic discharge
Human body model
2 kV
Charged-device model
2 kV
Machine mode
200 V
Meets or exceeds JEDEC Spec EIA/JESD78 latchup test
2
Copyright 2009, Texas Instruments Incorporated
Product Folder Link(s): SN65EPT21
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相關代理商/技術參數 |
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| SN65EPT21DR | 功能描述:LVDS 接口集成電路 3.3V ECL Diff Rcvr RoHS:否 制造商:Texas Instruments 激勵器數量:4 接收機數量:4 數據速率:155.5 Mbps 工作電源電壓:5 V 最大功率耗散:1025 mW 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-16 Narrow 封裝:Reel |
| SN65EPT22 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3.3 V Dual LVTTL/LVCMOS to Differential LVPECL Buffer |
| SN65EPT22_10 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3.3 V Dual LVTTL/LVCMOS to Differential LVPECL Buffer |
| SN65EPT22D | 功能描述:轉換 - 電壓電平 3.3V LVTTL/LVCMOS to Diff LVPECL Bfr RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8 |
| SN65EPT22DGK | 功能描述:轉換 - 電壓電平 3.3V LVTTL/LVCMOS to Diff LVPECL Bfr RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8 |
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