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參數(shù)資料
| 型號： | SMS3.3.TC |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | SOT-23, 6 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 170K |
| 代理商： | SMS3.3.TC |
3
2004 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SMS3.3
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating
Pulse Waveform
Clam
Clamping V
ping V
ping Voltage vs. P
oltage vs. P
oltage vs. Peak Pulse Current
eak Pulse Current
FFFFFor
or
orw
w
war
ar
ard V
d V
d Voltage vs. F
oltage vs. F
oltage vs. For
or
orw
w
war
ar
ard Current
d Current
Capacitance vs. R
Capacitance vs. Reeeeevvvvver
er
erse V
se V
oltage
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100
125
150
Ambient Temperature - TA (
oC)
%
of
Ra
te
d
P
o
w
er
or
I PP
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Duration - tp (s)
Peak
Pu
ls
ePo
w
er
-
P
Pk
(kW
)
0
1
2
3
4
5
6
7
8
9
10
02
46
8
10
12
14
Forward Current - IF (A)
F
o
rw
ar
d
Vo
lt
ag
e-
VF
(V
)
Waveform
Parameters:
tr = 8s
td = 20s
0
10
20
30
40
01
2
3
4
Reverse Voltage - VR (V)
C
a
p
aci
ta
n
ce
-
C
j(
pF)
I/O to GND
f = 1MHz
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
101214
Peak Pulse Current - IPP (A)
C
lam
p
in
g
V
o
lt
ag
e
-V
C
(V
)
Waveform
Parameters:
tr = 8s
td = 20s
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (s)
Per
cen
tof
I
PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8s
td = 20s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SMS3.3.TG | 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
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| SMS3924-075 | SILICON, MIXER DIODE |
| SMS3922-015LF | SILICON, MIXER DIODE |
| SMS3923-001LF | SILICON, MIXER DIODE |
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