參數(shù)資料
型號(hào): SMS12T3
廠商: ON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: SC-74, 6 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 43K
代理商: SMS12T3
SMS05T1 Series
http://onsemi.com
3
SMS15
SMS12
Figure 1. Non–Repetitive Peak Pulse Power
versus Pulse Time
Figure 2. Power Derating Curve
Figure 3. Pulse Waveform
t, TIME (
ms)
30
15
10
5
0
Figure 4. Clamping Voltage versus
Peak Pulse Current
IPP, PEAK PULSE CURRENT (A)
25
20
15
10
5
0
15
10
5
0
25
PERCENT
OF
I
PP
V
C
,CLAMPING
VOL
T
AGE
(V)
Figure 5. 8 x 20
ms VF
IF, FORWARD CURRENT (A)
5
3
1
10
5
0
Figure 6. Typical Capacitance (SMS05 Series)
VR, REVERSE VOLTAGE (V)
25
20
15
10
5
0
150
100
50
0
200
250
V
F,
FOR
W
ARD
VOL
T
AGE
(V)
C,
CAP
ACIT
ANCE
(pF)
25
20
90
80
70
60
50
40
30
20
10
0
100
110
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
td = IPP/2
4
20
15
PULSE
WAVEFORM
tr = 8 ms
td = 20 ms
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
20
SMS24
2
300
TJ = 25°C
c–t
8 X 20
ms SURGE
SMS05
SMS12
SMS05
tp, PULSE DURATION (ms)
10
1
0.1
1000
100
10
1
0.1
TA, AMBIENT TEMPERATURE (°C)
150
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
0.01
100
110
P
PP
,PEAK
PULSE
POWER
(kW)
%
OF
RA
TED
POWER
OR
I
PP
SMS15
SMS24
40
35
30
50
45
相關(guān)PDF資料
PDF描述
SMS05 200 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
SMS12 200 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
SMS1043-00 SILICON, LOW BARRIER SCHOTTKY, UHF-C BAND, MIXER DIODE
SMS1526-30 SILICON, UHF-C BAND, MIXER DIODE
SMS1528-10 SILICON, UHF-C BAND, MIXER DIODE
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