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參數(shù)資料
| 型號： | SMM4F8.5A-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-222AA |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 112K |
| 代理商： | SMM4F8.5A-TR |
Characteristics
SMM4F
2/10
1
Characteristics
Table 1.
Absolute ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
VPP
Peak pulse voltage (IEC 61000-4-2 contact discharge)
30
kV
PPP
Peak pulse power dissipation (1)
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
Tj initial = Tamb
400
W
P
Power dissipation on infinite heatsink
Tamb = 125 °C
2.5
W
IFSM
Non repetitive surge peak forward current
for unidirectional types
tp = 10 ms
Tj initial = Tamb
30
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-55 to +175
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
Table 2.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to leads
20
°C/W
Rth(j-a)
Junction to ambient on PCB with recommended pad layout
250
Table 3.
Electrical characteristics - parameter definitions (Tamb = 25 °C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
IR
Breakdown current
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
RD
Dynamic resistance
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
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