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參數(shù)資料
| 型號： | SMM150NR04 |
| 廠商： | Summit Microelectronics, Inc. |
| 英文描述： | Single-Channel Supply Voltage Marginer/Monitor |
| 中文描述： | 單通道電源電壓Marginer /監(jiān)視器 |
| 文件頁數(shù)： | 5/22頁 |
| 文件大?。?/td> | 388K |
| 代理商： | SMM150NR04 |
SMM150
Preliminary Information
Summit Microelectronics, Inc
5
ABSOLUTE MAXIMUM RATINGS
Temperature Under Bias ...................... -55
°
C to 125
°
C
Storage Temperature QFN................... -65
°
C to 150
°
C
Terminal Voltage with Respect to GND:
VDD Supply Voltage..........................-0.3V to 6.0V
All Others ................................-0.3V to V
DD
+ 0.7V
FAULT#…………………………….… GND to 15.0V
Output Short Circuit Current...............................100mA
Reflow Solder Temperature (10 secs)….………....240
°
C
Junction Temperature.........................…….....…...150°C
ESD Rating per JEDEC……………………..……..2000V
Latch-Up testing per JEDEC………..……......…
±
100mA
Note - The device is not guaranteed to function outside its operating
rating. Stresses listed under Absolute Maximum Ratings may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions
outside those listed in the operational sections of the specification is
not implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability. Devices are
ESD sensitive. Handling precautions are recommended.
RECOMMENDED OPERATING CONDITIONS
Temperature Range (Industrial)..........–40
°
C to +85
°
C
(Commercial)..............0
°
C to +70
°
C
VDD Supply Voltage.................................. 2.7V to 5.5V
Inputs.........................................................GND to VDD
Package Thermal Resistance (
θ
JA
)
28 Pad QFN…………….…………………….…80
o
C/W
20 Ball
Ultra
CSP
TM
………..………….…….…TBD
o
C/W
Moisture Classification Level 1 (MSL 1) per J-STD- 020
RELIABILITY CHARACTERISTICS
Data Retention……………………………..…..100 Years
Endurance……………………….……….100,000 Cycles
DC OPERATING CHARACTERISTICS
(Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.)
Symbol
Parameter
Notes
Min.
Typ.
Max
Unit
VDD
Supply Voltage
2.7
3.3
5.5
V
VM
Positive Sense Voltage
VM pin
0.3
VDD
V
I
DD
Power Supply Current from
VDD
TRIM output current through
100
to 1.0V
TRIM output voltage range
TRIM pin floating
3
mA
TRIM Sourcing Max Current
TRIM Sinking Max Current
I
TRIM
±
1.5mA
Depends on Trim range of DC-
DC Converter
VDD = 2.7V
VDD = 5.0V
VDD = 2.7V
VDD = 5.0V
1.5
-1.5
mA
mA
V
I
TRIM
V
TRIM
GND
2.5
V
ADOC
Margin Range
0.3
VDD
V
0.9xVDD
0.7xVDD
VDD
VDD
0.1xVDD
0.3xVDD
V
IH
Input High Voltage
SDA,SCL,WP,MUP,MDN
Input Low Voltage
SDA,SCL,WP,MUP,MDN
Open Drain Output
FAULT#, READY
Address Input High Voltage,
A2, A1, A0
Address Input Low Voltage,
A2, A1, A0
Address Input Tristate
Maximum Leakage – High Z VDD = 5.0V
Monitor Voltage Range
V
V
IL
V
V
OL
ISINK = 1mA
0.2
V
VDD = 2.7V, R
pullup
≤
300k
VDD = 5.0V, R
pullup
≤
300k
VDD = 2.7V, R
pulldown
≤
300k
VDD = 5.0V, R
pulldown
≤
300k
VDD = 2.7V
0.9xVDD
0.7xVDD
-1.8
-2.0
0
VDD
VDD
0.1xVDD
0.3xVDD
+1.4
+1.6
VDD
V
AIH
V
V
AIL
V
I
AIT
μ
A
OV/UV
COMP1 and COMP2 pins
COMP1 and COMP2 pins,
V
TH
-V
TL
(see Note 1)
See Pin Descriptions
V
V
HYST
COMP1/2 DC Hysteresis
10
mV
R
Pull-Up
Note 1 – The Base DC Hysteresis voltage is measured with a 1.25V external voltage source. The resulting value is determined by subtracting
Threshold Low from Threshold High, V
TH
-V
TL
while monitoring the FAULT# pin state. Base DC Hysteresis is measured with a 1.25V input. Actual DC
Hysteresis is derived from the equation: (V
IN
/V
REF
)(Base Hysteresis). For example, if V
IN
=2.5V and V
REF
=1.25V then Actual DC Hysteresis=
(2.5V/1.25V)(0.003V)=6mV.
Input Pull-Up Resistors
50
k
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