參數(shù)資料
型號(hào)： SMLJ90CATR
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類(lèi)： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝： PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 189K
代理商： SMLJ90CATR
SURFACE MOUNT 3000 Watt
Transient Voltage Suppressor
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
Copyright
2009
4-06-2009 REV J
WWW
.Micr
o
semi
.CO
M
S C O T TS DALE DIVISION
SMLJ5.0 thru SMLJ170CA, e3
and SMLG5.0 thru SMLG170CA, e3
SML
5.0
–
170V,
e3
GRAPHS
FIGURE 2
– PULSE WAVEFORM
100
10
1.0
0
(Waveform – See Figure 2)
Non-repetitive
(P
PP
)–
Peak
Pul
se
Power
-
kW
Test wave form
parameterxs
tr = 10
μsec.
tp = 1000
μsec.
tp – Pulse Time – sec
1
μs
10
μsec
100
μsec
1ms
10ms
FIGURE 1 –
Peak Pulse Power vs. Pulse Time
PAD LAYOUT
INCHES
mm
A
.390
9.90
B
.110
2.79
C
.150
3.81
INCHES
mm
A
0.510
12.95
B
0.110
2.79
C
0.150
3.81
C:
Capacitance
in
pico
farads
TL Lead Temperature
oC
BV: Breakdown Voltage in Volts
FIGURE 3 –
Derating Curve
FIGURE 4
Typical Capacitance vs.
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMLJ
SMLG
Breakdown Voltage
PACKAGE DIMENSIONS
DO-214AB
DO-215AB
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115 .260 .220 .305 .077 .380
.025
.030
MAX
.121 .280 .245 .320 .104 .400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92 6.60 5.59 7.75 1.95 9.65
0.635 .760
MAX
3.07 7.11 6.22 8.13 2.65 10.16 1.016 1.520
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
相關(guān)PDF資料
PDF描述
SMLG10AE3 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMLG10AE3TR 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMLG10CE3 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMLG10E3 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
SMLG110CAE3TR 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
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