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參數(shù)資料
| 型號： | SML80A12 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | 11.5 A, 800 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 24K |
| 代理商： | SML80A12 |
SML80J25
5/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
800
25
100
±30
±40
450
3.6
–55 to 150
300
25
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 8.00mH, R
G
= 25
W
, Peak I
L
= 25A
V
DSS
I
D(cont)
R
DS(on)
0.300
W
800V
25A
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular SOT–227 Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
3
4
2
R
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
14.9 (0.587)
15.1 (0.594)
3.3 (0.129)
3.6 (0.143)
7.8 (0.307)
8.2 (0.322)
31.5 (1.240)
31.7 (1.248)
4.0 (0.157)
(2 Places)
R =
4.0 (0.157)
4.2 (0.165)
)
)
4.1 (0.161
4.3 (0.169
4.8 (0.187)
4.9 (0.193)
(4 places)
W =
H =
8.9 (0.350)
9.6 (0.378)
11.8 (0.463)
12.2 (0.480)
Hex Nut M4
(4 places)
1
1
2
2
0.75 (0.030)
0.85 (0.033)
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
SOT–227 Package Outline.
Dimensions in mm (inches)
Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
*
S
G
S
D
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PDF描述 |
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| SML80B12 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML80B12 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML80B13 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML80B13F | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML80B16 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML80H12 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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