- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄379395 > SML50B26F (SEMELAB LTD) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SML50B26F |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET |
| 中文描述： | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | SML50B26F |
SML50B26F
8/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
2
6
(
B
1
2
4
(
M
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
TO–247AD Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER FREDFET
500
26
104
±20
±30
300
2.4
–55 to 150
300
26
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 3.85mH, R
G
= 25
, Peak I
L
= 26A
V
DSS
I
D(cont)
R
DS(on)
0.200
500V
26A
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular TO–247 Package
Fast Recovery Body Diode
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML60B21 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60H20 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60A16 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60B16 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60B18 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML50B30 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50C15 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50EUZ12B | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Enhanced Ultrafast Recovery Diode 1200 Volt, 50 Amp |
| SML50H19 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50H24 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。